these transistors are designed for general purpose amplifier features ? pb?free packages are available lbc857att1g series leshan radio company, ltd. general purpose transistors pnp silicon applications. they are housed in the sc?89 package which sc-89 ordering information device marking package shipping 2 lbc857att1g,s-lbc857att1g 3e sc?89 3,000 / tape & reel lbc857btt1g,s-lbc857btt1g 3f 3,000 / tape & reel lbc857ctt1g,s-lbc857ctt1g 3g 3,000 / tape & reel is designed for low power surface mount applications. sc?89 sc?89 2 emitter 3 collect or 1 base maximum ratings (t a = 25 c) rating symbol max unit collector?emitter voltage v ceo ?45 v collector?base voltage v cbo ?50 v emitter?base voltage v ebo ?5.0 v collector current ? continuous i c ?100 madc thermal characteristics characteristic symbol max unit total device dissipation, fr?4 board (note 1) t a = 25 c derated above 25 c p d 200 1.6 mw mw/ c thermal resistance, junction?to?ambient (note 1) r ja 600 c/w total device dissipation, fr?4 board (note 2) t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient (note 2) r ja 400 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ min pad. 2. fr?4 @ 1.0 1.0 in pad. rev.o 1/5 s-lbc857att1g series ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable.
leshan radio company, ltd. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 ma) lbc857 series v (br)ceo ?45 ? ? v collector ?emitter breakdown voltage (i c = ?10 a, v eb = 0) lbc857b only v (br)ces ?50 ? ? v collector ?base breakdown voltage (i c = ?10 a) lbc857 series v (br)cbo ?50 ? ? v emitter ?base breakdown voltage (i e = ?1.0 a) lbc857 series v (br)ebo ?5.0 ? ? v collector cutoff current (v cb = ?30 v) collector cutoff current (v cb = ?30 v, t a = 150 c) i cbo ? ? ? ? ?15 ?4.0 na a on characteristics dc current gain (i c = ?10 a, v ce = ?5.0 v) lbc857b lbc857c (i c = ?2.0 ma, v ce lbc857c h fe ? ? 220 420 150 270 290 520 ? ? 475 800 ? collector ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v ce(sat) ? ? ? ? ?0.3 ?0.65 v base ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v be(sat) ? ? ?0.7 ?0.9 ? ? v base ?emitter on voltage (i c = ?2.0 ma, v ce = ?5.0 v) (i c = ?10 ma, v ce = ?5.0 v) v be(on) ?0.6 ? ? ? ?0.75 ?0.82 v small?signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ?0.2 ma, v ce = ?5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db lbc857a ? 90 ? lbc857a = ?5.0 v) lbc857b 125 180 250 rev.o 2/5 lbc857att1g series , s-lbc857att1g series
leshan radio company, ltd. lbc857att1g,lbc857btt1g,lbc857ctt1g figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) -0.2 0.2 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma t a = 25 c 1.0 rev.o 3/5 lbc857att1g series , s-lbc857att1g series
r(t), normalized transient thermal resistance leshan radio company, ltd. lbc847att1g,lbc847btt1g,lbc847ctt1g figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current?gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c figure 7. thermal response 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 8. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable opera- tion. collector load lines for specific circuits must fall be- low the limits indicated by the applicable curve. the data of figure 8 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 7. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limita- tions imposed by the secondary breakdown. rev.o 4/5 lbc857att1g series , s-lbc857att1g series
leshan radio company, ltd. g m 0.08 (0.003) x d 3 pl j -x- -y- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c-01 obsolete, new standard 463c-02. a b y 12 3 n 2 pl k c -t- seating plane dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m ??? ??? 10 ??? n ??? ??? 10 ??? s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref ??? 10 ??? 10 0.063 0.067 max max m h h l g recommended pattern of solder pads s sc - 8 9 rev.o 5/5 lbc857att1g series , s-lbc857att1g series
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